The 13th Gallium Arsenide and other Compound Semiconductors Application Symposium (GAAS®) will be held from 3 to 4 October 2005, in Paris, France, as part of European Microwave Week. This is the largest event in Europe relating to RF microelectronics. It is dedicated to a broad range of high frequency related topics, ranging from semiconductor materials to mobile system applications and radar.

The rapid development of RF devices has revolutionised today's telecommunication and sensor systems. UMTS, LMDS, and other systems working in the microwave and millimetre-wave range will facilitate totally new services. In such a swiftly changing environment, it is essential to be informed about the current state-of-the-art technology, especially the latest developments. GAAS® is one of the leading conferences for RFICs and their applications in Europe, and therefore the ideal event to keep up to date with the latest achievements in the field. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics-based and empirical-behavioural modelling of microwave and opto-electronic active devices, design of ICs based on GaAs, InP, SiGe, GaN, SiC and other compound semiconductors. Special emphasis will be given to applications, covering the field of telecommunications (RF, microwave and optical), automotive, sensors, MEMS, military and space, as well as emerging technologies such as wide-band gap semiconductors.

Final Papers should be submitted by uploading a pdf-file (portable document format) to the EuMW2005 website www.eumw.net. See instructions at the paper submission web page.